BFP405 Datasheet, PDF(2/7 Page) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz)

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BFP405 Datasheet, PDF (2/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz)

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SIEGET25 BFP405

Electrical Characteristics at TA = 25Â°C, unless otherwise specified.

Parameter

Symbol

Values

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-base cutoff current

VCB = 5 V, IE = 0

Emitter-base cutoff current

VEB = 1.5 V, IC = 0

DC current gain

IC = 5 mA, VCE = 4 V

V(BR)CEO 4.5

ICBO

IEBO

hFE

AC characteristics (verified by random sampling)

Transition frequency

IC = 10 mA, VCE = 3 V, f = 2 GHz

Collector-base capacitance

VCB = 2 V, f = 1 MHz

Collector-emitter capacitance

Ccb

Cce

VCE = 2 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Noise figure

Ceb

IC = 2 mA, VCE = 2 V, ZS = ZSopt ,

f = 1.8 GHz

Power gain 1)

Gms

IC = 5 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,

f = 1.8 GHz

Insertion power gain

|S21|2

IC = 5 mA, VCE = 2 V, f = 1.8 MHz,

ZS = ZL = 50

Third order intercept point

IP3

IC = 5 mA, VCE = 2 V, ZS=ZSopt , ZL=ZLopt ,

f = 1.8 GHz

1dB Compression point

IC = 5 mA, VCE = 2 V, f = 1.8 GHz,

ZS=ZSopt , ZL=ZLopt

P-1dB

150

90 150

0.05 0.1

0.24 -

0.29 -

1.25 -

Unit

ÂµA

GHz

dBm

1Gms = |S21 / S12|

Aug-20-2001

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