BFP405 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz)

NPN Silicon RF Transistor

For low current applications

For oscillators up to 12 GHz

Noise figure F = 1.25 dB at 1.8 GHz
outstanding G_ms = 23 dB at 1.8 GHz

Transition frequency f_T = 25 GHz

Gold metallization for high reliability

SIEGET ^ 25 GHz f_T - Line
SIEGET
25 BFP405
3
4
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP405
Marking
Pin Configuration
ALs
1=B 2=E 3=C 4=E
Package
SOT343
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S
120°C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
4.5
15
1.5
12
1
55
150
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point²⁾
R_thJS

520
1_{TS is measured on the emitter lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
K/W
1
Aug-20-2001