BFG135A Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

BFG 135A
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
15
dB IC=100mA
0.9GHz
12
11
0.9GHz
10
9
1.8GHz
8
7
6
5
4
3
2
1
00
2
4
6
8
V
12
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
45
dBm
10V
8V
35
5V
30
3V
25
2V
20
1V
15
100 _{20 40 60 80 100 120 mA 160}
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
I_C=100mA
dB
V_CE = Parameter
30
I_C=100mA
dB
20
15
10
10V
5
2V
1V
0.7V
00.0 _{0.5 1.0 1.5 2.0 2.5 GHz 3.5}
f
6
20
15
10
5
0
0.7
1V
2V
10V
-50.0
0.5
1.0
1.5
2.0 GHz
3.0
f
Oct-26-1999