BFG135A Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

BFG 135A
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
4.0
pF
3.0
2.5
2.0
1.5
1.0
0.5
0.00
4
8
12
16 V
22
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
7.0
GHz
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.00
10V
5V
3V
2V
1V
0.7V
20 40 60 80 100 120 140 mA 170
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
16
dB
10V
5V
3V
12
2V
10
8
1V
6
4
0.7V
2
00 _{20 40 60 80 100 120 140 mA 170}
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
11
dB
9
10V
5V
8
3V
7
2V
6
5
4
1V
3
2
1
0.7V
00 _{20 40 60 80 100 120 140 mA 170}
I_C
5
Oct-26-1999