BFG135A Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

NPN Silicon RF Transistor

For low-distortion broadband amplifier
stages in antenna and telecommunication
systems up to 2 GHz at collector currents from
70 mA to 130 mA

Power amplifiers for DECT and PCN systems

Integrated emitter ballast resistor

f_T = 6 GHz
BFG 135A
4
3
2
1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG 135A
Marking
Pin Configuration
BFG135A 1 = E 2 = B 3 = E 4 = C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T_S
100 °C ^F)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
Value
Unit
15
V
25
25
2
150
mA
20
1
W
150
°C
-65 ... 150
-65 ... 150

50
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
1
Oct-26-1999