HYB25L256160AC Datasheet, PDF (53/55 Pages) Infineon Technologies AG – 256-Mbit Mobile-RAM

CLK
CK E
CS
RAS
CAS
WE
200 s
tRP
HYB25L256160AC
256-Mbit Mobile-RAM
Timing Diagrams
tRC
Deep Power Do wn
exi t
All banks Au to
prec harge refresh
Auto
refresh
Mode
Register
Set
Exte nded New
Mode Com mand
Regis ter Accepted
Set
Here
Figure 37 Deep Power Down Exit
Note: The deep power down mode is exited by asserting CKE high. After the exit, the following sequence is needed
to enter a new command:
1. Maintain NOP input conditions for a minimum of 200 µs
2. Issue precharge commands for all banks of the device
3. Issue eight or more autorefresh commands
4. Issue a mode register set command to initialize the mode register
5. Issue an extended mode register set command to initialize the extende mode register
Data Sheet
53
V1.1, 2003-04-16