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HYB25L256160AC Datasheet, PDF (21/55 Pages) Infineon Technologies AG – 256-Mbit Mobile-RAM | |||
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HYB25L256160AC
256-Mbit Mobile-RAM
Electrical Characteristics
Table 9 Input and Output Capacitances
Parameter
Input Capacitance: CLK
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQ
Symbol
CI1
CI2
CIO
Values
min. typ. max.
â
â 3.5
â
â 3.8
4.0 â 5.0
Unit
pF
pF
pF
Note/
Test Condition
1)
1)
1)
1) These values are guaranteed by design and are tested on a sample base only. VDDQ = VDD = 2.5 V ± 0.2 V, f = 1 MHz,
TCASE = 25 ° C, VOUT(DC) = VDDQ/2, VOUT (Peak to Peak) 0.2 V. Unused pins are tied to ground.
4.2
Timing Characteristics
Table 10 AC Timing Characteristics1)2)
Parameter
Symbol
â8
â7.5
Unit Note/ Test Condition
min. max. min. max.
Clock
DQ output access time from CLK
CK high-level width
CK low-level width
Clock cycle time
Clock frequency
Transition time
Setup and Hold Times
tAC3
â
7.5
â
7.5
ns VDDQ < 2.3 V 3)4)5)8)
â6
â6
ns VDDQ ⥠2.3 V 3)4)5)8)
tAC2
â
7.5
â
7.5
ns VDDQ < 2.3 V 3)4)5)8)
â6
â6
ns VDDQ ⥠2.3 V 3)4)5)8)
tCH
3â
2.5 â
ns â
tCL
3â
2.5 â
ns â
tCK3
8
â
7.5 â
ns VDDQ ⥠2.3 V 3)
8â
8â
ns VDDQ < 2.3 V 3)
tCK2
9.5 â
9.5 â
ns 3)
fCK3
â
125 â
133
MHz VDDQ ⥠2.3 V 3)
â
125 â
125
MHz VDDQ < 2.3 V 3)
fCK2
â
105 â
105
MHz 3)
tT
0.5 1.5
0.3 1.2
ns â
Input setup time
Input hold time
CKE setup time
CKE hold time
Mode register setup time
Power down moder entry time
Common Parameters
tIS
2â
tIH
1â
tCKS
2
â
tCKH
1
â
tRSC
2
â
tSB
08
1.5 â
0.8 â
1.5 â
0.8 â
2â
0 7.5
ns 6)
ns 6)
ns 6)
ns 6)
tCK â
ns â
Active to Read or Write delay
tRCD
Precharge command period
tRP
Active to Precharge command
tRAS
Active bank A to Active bank A period tRC
Active bank A to Active bank B delay tRRD
CAS to CAS command delay
tCCD
19 â
19 â
ns 7)
19 â
19 â
ns 7)
48 100000 45 100000 ns 7)
70 â
67 â
ns 7)
16 â
15 â
ns 7)
1â
1â
tCK â
Data Sheet
21
V1.1, 2003-04-16
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