|
TLE7826G Datasheet, PDF (50/53 Pages) Infineon Technologies AG – Integrated double low-side switch, high-side/LED driver, hall supply, wake-up inputs and LIN communication with embedded MCU (32kB Flash) | |||
|
◁ |
TLE7826G
Application Information
18.3
Flash Program Mode via LIN-Fast-Mode
For flash programming the transmission rate of the integrated LIN transceiver can be changed to maximum
115 kBaud via SPI command. A dedicated BROM routine of the XC885 takes care of periodically servicing the
watchdog during this LIN-Fast-Mode. Further details are available in the XC885 Userâs Manual.
MSB
LSB
Input Data 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
LIN FLASH mode on 1 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0
LIN FLASH mode off 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0
Figure 20 LIN Flash mode SPI command
18.4
Thermal Resistance
TJ = TA + (PD Ã RthJA)
(8)
⢠TJ = Junction temperature [°C]
⢠TA = Ambient temperature [°C]
⢠PD = Total chip power dissipation [W]
⢠PINT = Chip internal power dissipation [W]
⢠PIO = Power dissipation caused by I/O currents [W]
⢠RthJA = Package thermal resistance [K/W]; junction-ambient
The total power dissipation can be calculated from:
PD = PINT + PIO
(9)
18.5
ESD Tests
Tests for ESD robustness according to IEC61000-4-2 âgun testâ (150pF, 330Ω) have been performed. The results
and test condition are available in a test report.
Table 15 ESD âGUN testâ
Performed Test
Result Unit Remarks
ESD at pin LIN, VS, MON4 versus GND
⥠+8
kV
1)Positive pulse
ESD at pin LIN, VS, MON4 versus GND
⤠-8
kV
1)Negative pulse
1) ESD susceptibility âESD GUNâ according LIN EMC 1.3 Test Specification, Section 4.3. (IEC 61000-4-2) -Tested by external
test house (IBEE Zwickau, EMC Test report Nr. 09-09-07).
Data Sheet
50
Rev. 3.01, 2008-04-15
|
▷ |