TLE7810G Datasheet, PDF (50/53 Pages) Infineon Technologies AG – Integrated double low-side switch, high-side/LED driver, hall supply, wake-up inputs and LIN communication with embedded MCU (16kB Flash)

TLE7810G
Application Information
18.3
Flash Program Mode via LIN-Fast-Mode
For flash programming the transmission rate of the integrated LIN transceiver can be changed to maximum
115 kBaud via SPI command. A dedicated BROM routine of the XC866 takes care of periodically servicing the
watchdog during this LIN-Fast-Mode. Further details are available in the XC866 User’s Manual.
MSB
LSB
Input Data 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
LIN FLASH mode on 1 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0
LIN FLASH mode off 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0
Figure 20 LIN Flash mode SPI command
18.4
Thermal Resistance
T_J = T_A + (P_D × R_thJA)
(8)
• T_J = Junction temperature [°C]
• T_A = Ambient temperature [°C]
• P_D = Total chip power dissipation [W]
• P_INT = Chip internal power dissipation [W]
• P_IO = Power dissipation caused by I/O currents [W]
• R_thJA = Package thermal resistance [K/W]; junction-ambient
The total power dissipation can be calculated from:
P_D = P_INT + P_IO
(9)
18.5
ESD Tests
Tests for ESD robustness according to IEC61000-4-2 “gun test” (150pF, 330Ω) have been performed. The results
and test condition are available in a test report.
Table 15 ESD “GUN test”
Performed Test
Result Unit Remarks
ESD at pin LIN, V_S, MON4 versus GND
≥ +8
kV
1)_{Positive pulse}
ESD at pin LIN, V_S, MON4 versus GND
≤ -8
kV
1)_{Negative pulse}
1) ESD susceptibility “ESD GUN” according LIN EMC 1.3 Test Specification, Section 4.3. (IEC 61000-4-2) -Tested by external
test house (IBEE Zwickau, EMC Test report Nr. ).
Data Sheet
50
Rev. 3.01, 2008-04-15