SPP08N80C3_08 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor Features New revolutionary high voltage technology

5 Typ. output characteristics
I _D=f(V _DS); T _j=150 °C; t _p=10µs
parameter: V _GS
12
20 V
10 V
6V
9
5.5 V
6
5V
4.5 V
3
SPP08N80C3
6 Typ. drain-source on-state resistance
R _DS(on)=f(I _D); T _j=150 °C
parameter: V _GS
3.2
2.8
2.4
2
5.5 V
6 V _{6.5 V}
5V
10 V
1.6
4.5 V
20 V
0
0
5
10
15
20
25
V _DS [V]
1.2
0
3
6
9
12
15
I _D [A]
7 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=5.1 A; V _GS=10 V
1.8
8 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max; t _p=10µs
parameter: T _j
30
1.6
25 °C
25
1.4
1.2
20
1
15
0.8
98 %
typ
0.6
10
150 °C
0.4
5
0.2
0
-60 -20 20
60 100 140 180
T _j [°C]
0
0
2
4
6
8
10
V _GS [V]
Rev. 2.9
page 5
2008-10-15