SPP08N80C3_08 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor Features New revolutionary high voltage technology

Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current²⁾
Reverse diode dv /dt ⁴⁾
Symbol Conditions
I_S
I _S,pulse
T _C=25 °C
dv /dt
SPP08N80C3
Value
Unit
8
A
24
4
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R _thJC
Thermal resistance, junction -
ambient
R _thJA
leaded
Soldering temperature,
wave soldering only allowed at leads
T _sold
1.6 mm (0.063 in.)
from case for 10s
min.
Values
typ.
Unit
max.
-
-
1.2 K/W
-
-
62
-
-
260 °C
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V _(BR)DSS V _GS=0 V, I _D=250 µA
800
V _(BR)DS V _GS=0 V, I _D=8 A
-
V _GS(th) V _DS=V _GS, I _D=0.47 mA 2.1
I _DSS
V _DS=800 V, V _GS=0 V,
T _j=25 °C
-
V _DS=800 V, V _GS=0 V,
T _j=150 °C
-
I _GSS
V _GS=20 V, V _DS=0 V
-
R _DS(on)
V _GS=10 V, I _D=5.1 A,
T _j=25 °C
-
V _GS=10 V, I _D=5.1 A,
T _j=150 °C
-
R_G
f =1 MHz, open drain
-
-
-V
870
-
3
3.9
-
20 µA
100
-
-
100 nA
0.56 0.65 Ω
1.5
-
1.2
-Ω
Rev. 2.9
page 2
2008-10-15