SPP08N80C3_08 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor Features New revolutionary high voltage technology

SPP08N80C3
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
C _iss
V _GS=0 V, V _DS=100 V,
-
C _oss
f =1 MHz
-
Effective output capacitance, energy
related⁵⁾
C _o(er)
-
V _GS=0 V, V _DS=0 V
to 480 V
Effective output capacitance, time
related⁶⁾
C _o(tr)
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t _d(on)
-
t_r
V _DD=400 V,
-
V _GS=0/10 V, I _D=8 A,
t _d(off)
R _G=10 ? , T _j=25 °C
-
t_f
-
1100
46
36
99
25
15
72
10
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q _gs
-
Q _gd
V _DD=640 V, I _D=8 A,
-
Q_g
V _GS=0 to 10 V
-
V _plateau
-
6
- nC
22
-
45
60
5.5
-V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V _SD
V _GS=0 V, I _F=I _S=8 A,
T _j=25 °C
-
t _rr
-
Q _rr
V _R=400 V, I _F=I _S=8 A,
di _F/dt =100 A/µs
-
I _rrm
-
1
1.2 V
550
- ns
7
- µC
24
-A
1) _{J-STD20 and JESD22}
2) _{Pulse width t p limited by T j,max}
3) _{Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.}
4) _{ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch}
5) _{C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.}
6) _{C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.}
Rev. 2.9
page 3
2008-10-15