SMBT3906E6327 Datasheet, PDF (5/12 Pages) Infineon Technologies AG – PNP Silicon Switching Transistors

DC current gain h_FE = ƒ(I_C)
V_CE = 1 V
10 ³
125 °C
25 °C
10 ²
-55 °C
SMBT3906...MMBT3906
Saturation voltage I_C = ƒ(V_BEsat; V_CEsat)
h_FE = 10
2
mA
Ι _{C 10} ²
5
V_CE
EHP00767
V_BE
10 ¹
5
10
1
10
-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1 _mA10 ⁰
I_C
Collector-base capacitance C_cb = ƒ(V_CB)
Emitter-base capacitance C_eb = ƒ(V_EB)
10 ⁰
0
0.2 0.4 0.6 0.8 1.0 V 1.2
V_{BE sat} , V_{CE sat}
Total power dissipation P_tot = ƒ(T_S)
SMBT3906
8
pF
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
CEB
2
1.5
CCB
1
0
4
8
12
16 V 22
C_CB/C_EB
360
mW
300
270
240
210
180
150
120
90
60
30
0
0 15 30 45 60 75 90 105 120 _°C 150
T_S
5
2012-08-21