SMBT3906E6327 Datasheet, PDF (2/12 Pages) Infineon Technologies AG – PNP Silicon Switching Transistors

SMBT3906...MMBT3906
Thermal Resistance
Parameter
Junction - soldering point¹⁾
SMBT3906/ MMBT3906
SMBT3906S
SMBT3906U
Symbol
R_thJS
Value
Unit
mW
≤ 240
≤ 140
≤ 130
1_{For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)}
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO ⁴⁰
-
-
I_C = 1 mA, I_B = 0
Collector-base breakdown voltage
V_(BR)CBO 40
-
-
I_C = 10 µA, I_E = 0
Emitter-base breakdown voltage
V_(BR)EBO 6
-
-
I_E = 10 µA, I_C = 0
Collector-base cutoff current
I_CBO
-
-
50
V_CB = 30 V, I_E = 0
DC current gain¹⁾
h_FE
I_C = 100 µA, V_CE = 1 V
60
-
-
I_C = 1 mA, V_CE = 1 V
80
-
-
I_C = 10 mA, V_CE = 1 V
100
-
300
I_C = 50 mA, V_CE = 1 V
60
-
-
I_C = 100 mA, V_CE = 1 V
30
-
-
Unit
V
nA
-
Collector-emitter saturation voltage¹⁾
I_C = 10 mA, I_B = 1 mA
I_C = 50 mA, I_B = 5 mA
Base emitter saturation voltage¹⁾
I_C = 10 mA, I_B = 1 mA
I_C = 50 mA, I_B = 5 mA
V_CEsat
V
-
- 0.25
-
-
0.4
V_BEsat
0.65 - 0.85
-
- 0.95
1_{Pulse test: t < 300µs; D < 2%}
2
2012-08-21