SMBT3906E6327 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – PNP Silicon Switching Transistors

PNP Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor
with good matching in one package
• Complementary types:
SMBT3904...MMBT3904 (NPN)
• SMBT3906S/ U: for orientation in reel
see package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
SMBT3906...MMBT3906
Type
SMBT3906/ MMBT3906
SMBT3906S
SMBT3906U
Marking
Pin Configuration
Package
s2A 1=B 2=E 3=C -
-
-
SOT23
s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T_S ≤ 71°C, SOT23, MMBT3906
T_S ≤ 115°C, SOT363, MMBT3906S
T_S ≤ 107°C, SC74, MMBT3906U
Junction temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_tot
T_j
T_stg
Value
Unit
40
V
40
6
200
mA
mW
330
250
330
150
°C
-65 ... 150
1
2012-08-21