SMBT2222A_07 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – NPN Silicon Switching Transistor Low collector-emitter saturation voltage

SMBT2222A/MMBT2222A
DC current gain h_FE = ƒ(I_C)
V_CE = 10 V
10 ^{3 SMBT 2222/A}
5
h _FE
10 ²
5
150 ˚C
25 ˚C
-50 ˚C
EHP00743
Saturation voltage I_C = ƒ(V_BEsat; V_CEsat)
h_FE = 10
10 ^{3 SMBT 2222/A}
mA
Ι_C
10 ²
V_CE
5
EHP00742
V_BE
10 ¹
5
10 ⁰
5
10 ¹
10 ^-1
10 ⁰
10 ¹
10 ² mA 10 ³
Ι_C
Transition frequency f_T = ƒ(I_C)
V_CE = 20 V
10 ^-1
0
0.2 0.4 0.6 0.8 1.0 V 1.2
V_{BE sat} ,V_{CE sat}
Collector-base capacitance C_cb = ƒ(V_CB)
Emitter-base capacitance C_eb = ƒ(V_EB)
10 ^{3 SMBT 2222/A}
MHz
f_T
EHP00741
35
pF
25
2
20
10 ²
15
5
10
2
5
10¹
0
10 ⁰
5 10 ¹
5 10 ² mA 5 10 ³
0
Ι_C
5
CEB
CCB
5
10
15
V
25
V_CB(V_EB)
2007-04-19