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SMBT2222A_07 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – NPN Silicon Switching Transistor Low collector-emitter saturation voltage
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SMBT2222A/MMBT2222A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 20 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
Open-circuit reverse voltage transf. ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
fT
Ccb
Ceb
h11e
h12e
300 -
- MHz
-
2.5
5 pF
-
-
35
kΩ
2
-
8
0.25 - 1.25
10-4
-
-
8
-
-
4
Short-circuit forward current transf. ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h21e
-
50
- 300
75
- 375
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h22e
µS
5
-
35
25
- 200
Delay time
td
-
-
10 ns
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
Rise time
tr
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
-
-
25
Storage time
tstg
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA
Fall time
tf
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA
Noise figure
F
-
- 225
-
-
60
-
-
4 dB
IC = 100 µA, VCE = 10 V, f = 1 kHz,
∆ f = 200 Hz, RS = 1 kΩ
3
2007-04-19
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