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SMBT2222A_07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – NPN Silicon Switching Transistor Low collector-emitter saturation voltage
NPN Silicon Switching Transistor
• Low collector-emitter saturation voltage
• Complementary type: SMBT2907AW (PNP)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
SMBT2222A/MMBT2222A
3
2
1
Type
Marking
SMBT2222A/MMBT2222A s1P
Pin Configuration
1=B 2=E 3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
TS ≤ 77 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
40
75
6
600
330
150
-65 ... 150
Value
≤ 220
Unit
V
mA
mW
°C
Unit
K/W
1
2007-04-19