PTFA180701EF Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Typical Performance (cont.)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 550 mA, ƒ = 1880 MHz
20
64
19
18
17 ^Gain
16
15
14
13
58
Efficiency 52
46
40
34
28
22
16
12
0
10
10 20 30 40 50 60 70 80
Output Power (W)
PTFA180701E
PTFA180701F
Output Power (P–1dB) vs. Drain Voltage
I_DQ = 550 mA, ƒ = 1880 MHz
50
49
48
47
46
24
26
28
30
32
Drain Voltage (V)
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 550 mA, ƒ = 1840 MHz
T_CASE = 25°C
45 _{TCASE = 90°C}
40
Efficiency
-30
-35
35
-40
30 ^{ACP ƒC – 0.75 MHz}
-45
25
-50
20
-55
15
-60
10
ACPR ƒ_C + 1.98 MHz ^-65
5
-70
0
-75
30 32 34 36 38 40 42 44 46
Output Power, Avg. (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.15 A
0.44 A
0.73 A
1.10 A
2.20 A
3.30 A
4.41 A
5.51 A
0
20
40 60 80 100
Case Temperature (°C)
Data Sheet
5 of 11
Rev. 03.2, 2016-06-21