PTFA180701EF Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFA180701E
PTFA180701F
Thermally-Enhanced High Power RF LDMOS FETs
70 W, 1805 – 1880 MHz
Description
The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed
for GSM and GSM EDGE power amplifier applications in the 1805 MHz to
1880 MHz band. Features include input and output matching, and thermally-
enhanced packages with slotted or earless flanges. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFA180701E
Package H-36265-2
PTFA180701F
Package H-37265-2
EDGE EVM Performance
V_DD = 28 V, I_DQ = 550 mA, ƒ = 1836.6 MHz
5
50
4
Efficiency
40
3
30
2
20
1
10
EVM
0
0
30 32 34 36 38 40 42 44 46
Output Power, avg. (dBm)
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical EDGE performance
- Average output power = 44 dBm
- Gain = 16.5 dB
- Efficiency = 40.5%
- EVM = 2.0%
• Typical CW performance
- Output power at P–1dB = 72 W
- Gain = 15.5 dB
- Efficiency = 59%
• Integrated ESD protection: Human Body
Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
70 W (CW) output power
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 550 mA, P_OUT = 44 dBm, ƒ = 1836.6 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum
Gain
Drain Efficiency
@ 400 kHz
@ 600 kHz
Symbol Min Typ
EVM RMS
—
2.0
ACPR
—
–62
ACPR
—
–76
G_ps
—
16.5
η_D
—
40.5
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03.2, 2016-06-21