PTFA180701EF Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Typical Performance (cont.)
Broadband Test Fixture Performance (P–1dB)
V_DD = 28 V, I_DQ = 550mA
19
70
Drain Efficiency
18
60
17
50
Output Power
16
40
15
14
1760
Gain ³⁰
1800
1840
1880
Frequency (MHz)
20
1920
PTFA180701E
PTFA180701F
CW Broadband Performance
V_DD = 28 V, I_DQ = 550 mA, P_OUT = 43 dBm
55
40
50
30
45
Gain ₂₀
40
Efficiency
10
35
0
30
-10
Return Loss
25
-20
20
-30
1760 1780 1800 1820 1840 1860 1880 1900 1920
Frequency (MHz)
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, ƒ₁ = 1849, ƒ₂ = 1840 MHz
-20
-25
I_DQ = 275 mA
-30
-35
I_DQ = 825 mA
-40
-45
-50
I_DQ = 550 mA
-55
-60
26
30
34
38
42
46
Output Power, Avg. (dBm)
Power Sweep
V_DD = 28 V, ƒ = 1880 MHz
18.0
17.5 ^{IDQ = 825 mA}
17.0
16.5
16.0 ^{IDQ = 550 mA}
15.5
15.0
I_DQ = 275 mA
14.5
35 37 39 41 43 45 47 49
Output Power (dBm)
Data Sheet
4 of 11
Rev. 03.2, 2016-06-21