BFP650F Datasheet, PDF (5/7 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Power gain G_ma, G_ms = ƒ (I_C)
V_CE = 3 V
f = parameter in GHz
30
28
0.90GHz
26
24
22
20
1.80GHz
18
2.40GHz
16
3.00GHz
14
4.00GHz
12
5.00GHz
10
6.00GHz
8
6
0
20
40
60
80 100 120 140 160 180 200
I [mA]
C
BFP650F
Power gain G_ma, G_ms = ƒ (V_CE)
I_C = 80 mA
f = parameter in GHz
30
0.90GHz
25
1.80GHz
20
2.40GHz
3.00GHz
15
4.00GHz
5.00GHz
6.00GHz
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
V [V]
CE
2007-08-09
5