BFP650F Datasheet, PDF (4/7 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Total power dissipation P_tot = ƒ(T_S)
BFP650F
Collector-base capacitance C_cb = ƒ (V_CB)
f = 1 MHz
550
500
450
400
350
300
250
200
150
100
50
0
0
15
30
45
60
75
90 105 120 135 150
T [°C]
S
Transition frequency f_T = ƒ(I_C)
V_CE = parameter in V, f = 1 GHz
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
7
8
9
10
V [V]
CB
Power gain G_ma, G_ms = ƒ (f)
V_CE = 3 V, I_C = 80 mA
45
40
35
3.00V
30
25
20
2.00V
15
10
5
1.00V
0.50V
0
0
20
40
60
80
100 120 140 160 180
I [mA]
C
50
45
40
35
G
ms
30
25
20
|S |²
21
15
G
ma
10
5
0
0
1
2
3
4
5
6
f [GHz]
2007-08-09
4