BFP650F Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor*
• For medium power amplifiers and driver stages
• High OIP₃ and P_-1dB
• Ideal for low phase noise oscilators
• Maxim. available Gain G_ma = 21.5 dB at 1.8 GHz
Noise figure F = 0.8 dB at 1.8 GHz
• 70 GHz f_T- Silicon Germanium technology
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
* Short term description
BFP650F
3
2
4
1
Top View
43
XYs
12
Direction of Unreeling
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP650F
Marking
Pin Configuration
R5s
1=B 2=E 3=C 4=E -
-
1_{Pb-containing package may be available upon special request}
Package
TSFP-4
2007-08-09
1