BFP620_13 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Low Noise SiGe:C Bipolar RF Transistor

Third order Intercept Point IP3 =ƒ(I_C)
(Output, Z_S = Z_L=50 Ω)
V_CE = parameter, f = 900 MHz
27
dBm
2.3V
1.8V
21
18
15
1.3V
12
0.8V
9
6
3
0
0 10 20 30 40 50 60 70 80 mA 100
I_C
Transition frequency f_T= ƒ(I_C)
f = 1GHz
V_CE = Parameter in V
65
GHz
55
1.3 to 2.3
50
45
1
40
35
30
25
0.8
0.5
20
15
0.3
10
5
0
0 10 20 30 40 50 60 70 80 mA 100
I_C
BFP620
Third order Intercept Point IP3 = ƒ (I_C)
(Output, Z_S = Z_L = 50 Ω )
V_CE = parameter, f = parameter
Power gain G_ma, G_ms = ƒ(I_C)
V_CE = 1.5V
f = Parameter in GHz
30
dB
0.9
26
24
22
1.8
20
18
2.4
16
3
14
4
12
5
10
6
8
0 10 20 30 40 50 60 70 mA 90
I_C
5
2013-09-13