BFP620_13 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Low Noise SiGe:C Bipolar RF Transistor

BFP620
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
T_A = 25 °C
T_A = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 95°C
Junction temperature
Ambient temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_A
V
2.3
2.1
7.5
7.5
1.2
80
mA
3
185
mW
150
°C
-65 ... 150
Storage temperature
T_Stg
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point²⁾
Symbol
R_thJS
Value
Unit
300
K/W
Electrical Characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 7.5 V, V_BE = 0
V_CE = 5 V, V_BE = 0
Collector-base cutoff current
V_CB = 5 V, I_E = 0
Emitter-base cutoff current
V_EB = 0.5 V, I_C = 0
DC current gain
I_C = 50 mA, V_CE = 1.5 V, pulse measured
V_(BR)CEO ^{2.3 2.8}
-V
I_CES
I_CBO
µA
-
-
10
- 0.001 0.04
-
1
40 nA
I_EBO
-
10 900
h_FE
110 180 270 -
1_{TS is measured on the emitter lead at the soldering point to the pcb}
2_{For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)}
2
2013-09-13