BFP620_13 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Low Noise SiGe:C Bipolar RF Transistor

Low Noise SiGe:C Bipolar RF Transistor
• Highly linear low noise RF transistor
• Provides outstanding performance
3
for a wide range of wireless applications
4
• Based on Infineon's reliable high volume
Silicon Germanium technology
• Ideal for CDMA and WLAN applications
• Collector design provides high linearity of
14.5 dBm OP1dB for low voltage application
• Maximum stable gain
G_ms = 21.5 dB at 1.8 GHz
G_ma = 11 dB at 6 GHz
• Outstanding noise figure NF_min = 0.7 dB at 1.8 GHz
Outstanding noise figure NF_min = 1.3 dB at 6 GHz
• Accurate SPICE GP model enables effective
design in process
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
BFP620
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP620
Marking
Pin Configuration
R2s
1=B 2=E 3=C 4=E -
-
Package
SOT343
1
2013-09-13