BFP540ESD_13 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

Third order Intercept Point IP₃ = ƒ (I_C)
(Output, Z_S = Z_L = 50 Ω )
V_CE = parameter, f = 900 MHz
30
25
4.00V ^2.00V
3.00V
1.50V
20
1.00V
15
10
5
0
0
10
20
30
40
50
60
70
80
I [mA]
C
Power gain G_ma, G_ms = ƒ (f)
V_CE = 3 V, I_C = 25 mA
45
40
35
30
G
ms
25
20
15
|S |²
21
10
G
ma
5
0
1
2
3
4
5
6
f [GHz]
BFP540ESD
Transition frequency f_T = ƒ(I_C)
V_CE = parameter in V, f = 2 GHz
30
25
20
3 − 4.5V
15
2.00V
10
1.00V
0.75V
5
0.50V
0
0
10
20
30
40
50
60
70
80
90 100
I [mA]
C
Power gain G_ma, G_ms = ƒ (I_C)
V_CE = 3 V
f = parameter in GHz
28
26
24
0.90GHz
22
20
18
1.80GHz
16
2.40GHz
14
3.00GHz
12
10
4.00GHz
8
5.00GHz
6.00GHz
6
0
10
20
30
40
50
60
70
80
90 100
I [mA]
C
5
2013-09-13