BFP540ESD_13 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

BFP540ESD
Electrical Characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 50 mA, V_CE = 4 V, f = 1 GHz
Collector-base capacitance
C_cb
V_CB = 2 V, f = 1 MHz, V_BE = 0 ,
emitter grounded
21 30
- GHz
- 0.14 0.24 pF
Collector emitter capacitance
V_CE = 2 V, f = 1 MHz, V_BE = 0 ,
base grounded
C_ce
- 0.41 -
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz, V_CB = 0 ,
collector grounded
C_eb
- 0.59 -
Minimum noise figure
I_C = 5 mA, V_CE = 2 V, f = 1.8 GHz, Z_S = Z_Sopt
I_C = 5 mA, V_CE = 2 V, f = 3 GHz, Z_S = Z_Sopt
Power gain, maximum stable¹⁾
I_C = 20 mA, V_CE = 2 V, Z_S = Z_Sopt,
Z_L = Z_Lopt , f = 1.8 GHz
Power gain, maximum available¹⁾
I_C = 20 mA, V_CE = 2 V, Z_S = Z_Sopt,
Z_L = Z_Lopt, f = 3 GHz
Transducer gain
I_C = 20 mA, V_CE = 2 V, Z_S = Z_L = 50Ω, f = 1.8GHz
I_C = 20 mA, V_CE = 2 V, Z_S = Z_L = 50Ω, f = 3GHz
Third order intercept point at output²⁾
NF_min
G_ms
G_ma
|S_21e|²
IP3
dB
-
0.9 1.4
-
1.3
-
- 21.5 - dB
-
16
- dB
16 18.5
-
14
- 24.5
dB
-
-
- dBm
V_CE = 2 V, I_C = 20 mA, Z_S = Z_L = 50Ω, f = 1.8GHz
1dB compression point at output
I_C = 20 mA, V_CE = 2 V, Z_S = Z_L = 50Ω, f = 1.8GHz
P_-1dB
-
11
-
1_{Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|}
2_{IP3 value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2013-09-13