BFP540ESD_13 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier
• High ESD robustness
typical value 1000 V (HBM)
• Outstanding G_ms = 21.5 dB @ 1.8 GHz
Minimum noise figure NF_min = 0.9 dB @ 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
BFP540ESD
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP540ESD
Marking
Pin Configuration
AUs _{1=B 2=E 3=C 4=E -}
-
Package
SOT343
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A = 25 °C
T_A = -55 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation¹⁾
P_tot
T_S ≤ 77°C
Junction temperature
T_J
Ambient temperature
T_A
Storage temperature
T_Stg
1_{TS is measured on the emitter lead at the soldering point to the pcb}
Value
4.5
4
10
10
1
80
8
250
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
1
2013-09-13