BFN24_07 Datasheet, PDF (5/7 Pages) Infineon Technologies AG – NPN Silicon High-Voltage Transistors

BFN24, BFN26
Transition frequency f_T = ƒ(I_C)
V_CE = parameter in V, f = 2 GHz
Collector-base capacitance C_cb = ƒ(V_CB)
Emitter-base capacitance C_eb = ƒ(V_EB)
10 ^{3 BFN 24/26}
MHz
f_T
10 ²
5
EHP00622
10 ¹
10 ⁰
5 10 ¹
5 10 ² mA 5 10 ³
Ι_C
Total power dissipation P_tot = ƒ(T_S)
90
pF
70
60
50
40
CEB
30
20
10
0
0
4
8
12
Permissible Pulse Load
P_totmax/P_totDC = ƒ(t_p)
CCB
16 V 22
V_CB(V_EB)
400
mW
300
250
200
150
100
50
0
0 15 30 45 60 75 90 105 120 _°C 150
T_S
10 ^{3 BFN 24/26}
P_{tot max}
P_{tot DC}
5
10 ²
5
10 ¹
5
EHP00623
D = ^tp
T
t_p
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 ⁰
10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s
10 ⁰
t_p
5
2007-04-20