BFN24_07 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN Silicon High-Voltage Transistors

BFN24, BFN26
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
Unit
≤ 210
K/W
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0 , BFN24
I_C = 1 mA, I_B = 0 , BFN26
V_(BR)CEO
250
-
300
-
V
-
-
Collector-base breakdown voltage
I_C = 100 µA, I_E = 0 , BFN24
I_C = 100 µA, I_E = 0 , BFN26
V_(BR)CBO
250
-
-
300
-
-
Emitter-base breakdown voltage
I_E = 100 µA, I_C = 0
Collector-base cutoff current
V_CB = 200 V, I_E = 0 , BFN24
V_CB = 250 V, I_E = 0 , BFN26
V_CB = 200 V, I_E = 0 , T_A = 150 °C, BFN24
V_CB = 250 V, I_E = 0 , T_A = 150 °C, BFN26
V_(BR)EBO 6
I _CBO
-
-
-
-
-
-
µA
-
0.1
-
0.1
-
20
-
20
Emitter-base cutoff current
V_EB = 5 V, I_C = 0
DC current gain²⁾
I_C = 1 mA, V_CE = 10 V
I_C = 10 mA, V_CE = 10 V
I_C = 30 mA, V_CE = 10 V, BFN24
I_C = 30 mA, V_CE = 10 V, BFN26
I _EBO
h_FE
-
- 100 nA
25
-
40
-
40
-
30
-
-
-
-
-
-
Collector-emitter saturation voltage²⁾
I_C = 20 mA, I_B = 2 mA, BFN24
I_C = 20 mA, I_B = 2 mA, BFN26
Base emitter saturation voltage²⁾
I_C = 20 mA, I_B = 2 mA
V_CEsat
V
-
-
0.4
-
-
0.5
V_BEsat
-
-
0.9
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
2_{Pulse test: t < 300µs; D < 2%}
2
2007-04-20