BFN24_07 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon High-Voltage Transistors

NPN Silicon High-Voltage Transistors
• Suitable for video output stages in TV sets
and switching power supplies
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: BFN27 (PNP)
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BFN24, BFN26
3
2
1
Type
BFN24
BFN26
Marking
FHs
FJs
Pin Configuration
1=B
2=E
3=C
1=B
2=E
3=C
Package
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
BFN24
BFN26
Symbol
V_CEO
Value
Unit
V
250
300
Collector-base voltage
BFN24
V_CBO
BFN26
Emitter-base voltage
V_EBO
Collector current
I_C
Peak collector current
I_CM
Base current
I_B
Peak base current
I_BM
Total power dissipation-
P_tot
T_S ≤ 74 °C
Junction temperature
T_j
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
250
300
6
200
mA
500
100
200
360
mW
150
°C
-65 ... 150
1
2007-04-20