BDP948_08 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – PNP Silicon AF Power Transistors

BDP948, BDP950, BDP954
Collector cutoff current I_CBO = ƒ(T_A)
V_CB = 45 V
Collector-base capacitance C_cb = ƒ(V_CB)
Emitter-base capacitance C_eb = ƒ(V_EB)
10 ⁵
nA
10 ⁴
10 ³
max
10 ²
10 ¹
typ
10 ⁰
10 ^-1
0
20 40 60 80 100 120 °C 150
T_A
Total power dissipation P_tot = ƒ(T_S)
425
pF
350
300
250
200
CEB
150
100
50
CCB
0
0
4
8
12
16 V 22
V_CB(V_EB)
Permissible Pulse Load R_thJS = ƒ(t_p)
5.5
W
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 15 30 45 60 75 90 105 120 °C 150
t_s
10 ²
10 ¹
D = 0,5
0,2
0,1
10 ⁰
0,05
0,02
0,01
0,005
0
10
-1
10
-6
10 ^-5
10 ^-4
10 ^-3
10 ^-2
s
10 ⁰
tp
5
2008-10-10