BDP948_08 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – PNP Silicon AF Power Transistors

BDP948, BDP950, BDP954
Maximum Ratings
Parameter
Collector-emitter voltage
BDP948
BDP950
BDP954
Symbol
V_CEO
Value
45
60
100
Collector-base voltage
BDP948
BDP950
BDP954
V_CBO
45
60
120
Emitter-base voltage
Collector current
Peak collector current, t_p ≤ 10 ms
Base current
Peak base current
Total power dissipation-
T_S ≤ 100 °C
Junction temperature
Storage temperature
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
5
3
5
200
500
5
150
-65 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
≤ 10
Unit
V
A
mA
W
°C
Unit
K/W
2
2008-10-10