BDP948_08 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – PNP Silicon AF Power Transistors

BDP948, BDP950, BDP954
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 10 mA, I_B = 0 , BDP948
I_C = 10 mA, I_B = 0 , BDP950
I_C = 10 mA, I_B = 0 , BDP954
V_(BR)CEO
45
-
60
-
100
-
V
-
-
-
Collector-base breakdown voltage
I_C = 100 µA, I_E = 0 , BDP948
I_C = 100 µA, I_E = 0 , BDP950
I_C = 100 µA, I_E = 0 , BDP954
V_(BR)CBO
45
-
-
60
-
-
120
-
-
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
Collector-base cutoff current
V_CB = 45 V, I_E = 0
V_CB = 45 V, I_E = 0 , T_A = 150 °C
Emitter-base cutoff current
V_EB = 4 V, I_C = 0
DC current gain¹⁾
I_C = 10 mA, V_CE = 5 V
I_C = 500 mA, V_CE = 1 V
I_C = 1 A, V_CE = 2 V BDP948,BDP950
BDP954
V_(BR)EBO 5
I _CBO
-
-
I _EBO
-
h_FE
25
85
50
15
-
-
µA
-
0.1
-
20
- 100 nA
-
-
-
- 475
-
-
-
-
I_C = 1 A, V_CE = 2 V
Collector-emitter saturation voltage¹⁾
I_C = 2 A, I_B = 0.2 A
Base emitter saturation voltage¹⁾
I_C = 2 A, I_B = 0.2 A
V_CEsat
-
-
0.5 V
V_BEsat
-
-
1.3
AC Characteristics
Transition frequency
I_C = 50 mA, V_CE = 10 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 100 MHz
1_{Pulse test: t < 300µs; D < 2%}
f_T
-
100
- MHz
C_cb
-
40
- pF
3
2008-10-10