BCV61_11 Datasheet, PDF (5/7 Pages) Infineon Technologies AG – NPN Silicon Double Transistor

BCV61
Collector-base capacitance C_cb = ƒ(V_CB)
Emitter-base capacitance C_eb = ƒ(V_EB)
Total power dissipation P_tot = f(T_S)
12
pF
10
9
8
7
6
5
CEB
4
3
2
1
0
0
4
8
12
Permissible pulse load
P_totmax / P_totDC = f (t_p)
CCB
16 V 22
V_CB(V_EB
10 ^{3 BCV 61}
P_{tot max}
P_{tot DC}
5
10 ²
5
10 ¹
5
EHP00942
D = ^tp
T
t_p
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
350
mW
250
200
150
100
50
0
0 15 30 45 60 75 90 105 120 _°C 150
T_S
10 ⁰
10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s
10 ⁰
t_p
5
2011-10-13