BCV61_11 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN Silicon Double Transistor

BCV61
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics of T1
Collector-emitter breakdown voltage
I_C = 10 mA, I_B = 0
Collector-base breakdown voltage
I_C = 10 µA, I_E = 0
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
Collector cutoff current
V_CB = 30 V, I_E = 0
Collector cutoff current
V_CB = 30 V, I_E = 0 , T_A = 150 °C
DC current gain¹⁾
I_C = 0.1 mA, V_CE = 5 V
DC current gain¹⁾
I_C = 2 mA, V_CE = 5 V, BCV61B
I_C = 2 mA, V_CE = 5 V, BCV61C
Collector-emitter saturation voltage¹⁾
I_C = 10 mA, I_B = 0.5 mA
I_C = 100 mA, I_B = 5 mA
Base-emitter saturation voltage¹⁾
I_C = 10 mA, I_B = 0.5 mA
I_C = 100 mA, I_B = 5 mA
Base-emitter voltage¹⁾
I_C = 2 mA, V_CE = 5 V
I_C = 10 mA, V_CE = 5 V
V_(BR)CEO ³⁰
-
-V
V_(BR)CBO ³⁰
-
-
V_(BR)EBO 6
-
-
I_CBO
-
-
15 nA
I_CBO
-
-
5 µA
h_FE
100 -
--
h_FE
200 290 450
420 520 800
V_CEsat
mV
-
90 250
- 200 600
V_BEsat
-
700
-
-
900
-
V_BE(ON)
580 660 700
-
- 770
1Puls _{test: t ≤ 300 µs, D = 2%}
2
2011-10-13