BCV61_11 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon Double Transistor

NPN Silicon Double Transistor
• To be used as a current mirror
• Good thermal coupling and V_BE matching
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCV61
3
4
2
1
C1 (2)
C2 (1)
Tr.1
Tr.2
Type
BCV61B
BCV61C
Marking
1Ks
1Ls
E1 (3)
E2 (4)
EHA00012
1 = C2
1 = C2
Pin Configuration
2 = C1 3 = E1 4 = E2
2 = C1 3 = E1 4 = E2
Package
SOT143
SOT143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Symbol
V_CEO
Value
Unit
30
V
Collector-base voltage (open emitter)
V_CBO
30
(transistor T1)
Emitter-base voltage
DC collector current
Peak collector current, t_p < 10 ms
Base peak current (transistor T1)
Total power dissipation, T_S = 99 °C
Junction temperature
Storage temperature
V_EBS
I_C
I_CM
I_BM
P_tot
T_j
T_stg
6
100
mA
200
200
300
mW
150
°C
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS
≤170
K/W
1For _{calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)}
1
2011-10-13