BCP49_07 Datasheet, PDF (5/7 Pages) Infineon Technologies AG – NPN Silicon Darlington Transistors

BCP49
DC current gain h_FE = f (I_C)
V_CE = 5V
10 ^{6 BCP 29/49}
h _FE ⁵
125 ˚C
10 ⁵
25 ˚C
5
-55 ˚C
10 ⁴
5
EHP00255
Collector-emitter saturation voltage
I_C = f (V_CEsat), h_FE = 1000
10 ^{3 BCP 29/49}
Ι _C ^mA
10 ²
5
EHP00256
150 ˚C
25 ˚C
-50 ˚C
10 ¹
5
10 ³
10 ^-1
10 ⁰
10 ¹
10² mA 10³
Ι_C
Collector-base capacitance C_cb = ƒ(V_CB)
Emitter-base capacitance C_eb = ƒ(V_EB)
10 ⁰
0
0.5
1.0 V 1.5
V _CEsat
Base-emitter saturation voltage
I_C = f (V_BEsat), h_FE = 1000
160
10 ^{3 BCP 29/49}
pF
Ι _C ^mA
120
10 ²
100
5
80
60
CEB
10 ¹
40
5
CCB
20
0
0 4 8 12 16 20 24 28 V 34
10 ⁰
0
1.0
VCB0(VEB0
5
EHP00258
150 ˚C
25 ˚C
-50 ˚C
2.0 V 3.0
V _BEsat
2007-04-27