BCP49_07 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN Silicon Darlington Transistors

BCP49
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter saturation voltage1)
I_C = 100 mA, I_B = 0.1 mA
Base-emitter saturation voltage 1)
I_C = 100 mA, I_B = 0.1 mA
V_CEsat
-
-
1V
V_BEsat
-
-
1.5
AC Characteristics
Transition frequency
I_C = 50 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
f_T
- 200 - MHz
C_cb
-
6.5
- pF
1) Pulse test: t ≤ 300µs, D = 2%
3
2007-04-27