BCP49_07 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BCP49
4
3
2
1
C(2,4)
B(1)
E(3)
EHA00009
Type
BCP49
Marking
Pin Configuration
Package
BCP 49 1 = B 2 = C 3 = E 4 = C SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T_S = 124 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point²⁾
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
R_thJS
Values
Unit
60
V
80
10
500
mA
800
mA
100
200
1.5
W
150
°C
-65 ... 150
≤17
K/W
1Pb-containing _{package may be available upon special request}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
2007-04-27