 English |
|
|
|
|
|
|
|
| SMBTA06_07 Datasheet, PDF (4/7 Pages) Infineon Technologies AG – NPN Silicon AF Transistor Low collector-emitter saturation voltage | |||
| |||
| ◁ |
SMBTA06/MMBTA06
Collector cutoff current ICBO = Æ(TA)
VCBO = 80 V
Transition frequency fT = Æ(IC)
VCE = parameter in V, f = 2 GHz
10 4
nA
Î CBO
10 3
5
max
EHP00820
10 3
MHz
fT 5
EHP00817
10 2
5
10 2
10 1
typ
5
5
10 0
5
10 -1
0
50
100
C 150
TA
Collector-base capacitance Ccb = Æ(VCB)
Emitter-base capacitance Ceb = Æ(VEB)
10 1
10 0
5 10 1
5 10 2
mA 103
ÎC
Total power dissipation Ptot = Æ(TS)
80
pF
60
50
40
30
CEB
20
10
CCB
0
0
4
8
12
16 V 22
VCB(VEB)
550
mW
450
BCW66K
400
BCW66
350
300
250
200
150
100
50
0
0 15 30 45 60 75 90 105 120 °C 150
TS
4
2007-04-19
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese