SMBTA06_07 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN Silicon AF Transistor Low collector-emitter saturation voltage

SMBTA06/MMBTA06
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
V_(BR)CEO 80
-
-
Collector-base breakdown voltage
I_C = 100 µA, I_E = 0
V_(BR)CBO 80
-
-
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
V_(BR)EBO 4
-
-
Collector-base cutoff current
V_CB = 80 V, I_E = 0
V_CB = 80 V, I_E = 0 , T_A = 150 °C
I _CBO
-
-
0.1
-
-
20
Collector-emitter cutoff current
V_CE = 60 V, I_B = 0
I _CEO
-
- 100
DC current gain¹⁾
I_C = 10 mA, V_CE = 1 V
I_C = 100 mA, V_CE = 1 V
h_FE
100
-
-
100
-
-
Collector-emitter saturation voltage¹⁾
I_C = 100 mA, I_B = 10 mA
V_CEsat
-
- 0.25
Base-emitter voltage¹⁾
I_C = 100 mA, V_CE = 1 V
V_BE(ON)
-
-
1.2
Unit
V
µA
nA
-
V
AC Characteristics
Transition frequency
I_C = 20 mA, V_CE = 5 V, f = 20 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
f_T
-
100
- MHz
C_cb
-
7
- pF
1_{Pulse test: t < 300µs; D < 2%}
2
2007-04-19