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| SMBTA06_07 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN Silicon AF Transistor Low collector-emitter saturation voltage | |||
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DC current gain hFE = Æ(IC)
VCE = 1 V
10 3
h FE
100 C
10 2 25 C
-50 C
10 1
SMBTA06/MMBTA06
Collector-emitter saturation voltage
IC = Æ(VCEsat), hFE = 10
EHP00821
10 3
Î C mA
10 2
5
100 C
25 C
-50 C
EHP00819
10 1
5
10 0
10 -1
10 0
10 1
10 2 mA 10 3
ÎC
Base-emitter saturation voltage
IC = Æ(VBEsat), hFE = 10
10 0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 V 0.8
V CEsat
Collector current IC = Æ(VBE)
VCE = 1V
10 3
mA
ÎC
10 2
5
EHP00818
100 ËC
25 ËC
-50 ËC
10 3
mA
ÎC
10 2
5
EHP00815
100 C
25 C
-50 C
10 1
10 1
5
5
10 0
10 0
5
5
10 -1
0
10 -1
0.5
1.0
V 1.5
0
V BEsat
0.5
1.0
V 1.5
V BE
3
2007-04-19
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