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| SMBTA06UPN_07 Datasheet, PDF (4/7 Pages) Infineon Technologies AG – NPN / PNP Silicon AF Transistor Array High breakdown voltage | |||
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SMBTA06UPN
Collector cutoff current ICBO = Æ(TA)
VCBO = 80 V
Transition frequency fT = Æ(IC)
VCE = parameter in V, f = 2 GHz
10 4
nA
Î CBO
10 3
5
max
EHP00820
10 3
MHz
fT 5
EHP00817
10 2
5
10 2
10 1
typ
5
5
10 0
5
10 -1
0
50
100
C 150
TA
Collector-base capacitance Ccb = Æ(VCB)
Emitter-base capacitance Ceb = Æ(VEB)
10 1
10 0
5 10 1
5 10 2
mA 103
ÎC
Total power dissipation Ptot = Æ(TS)
65
pF
55
50
45
40
35
30
25
20
CEB
15
10
5
CCB
0
0
4
8
12
16 V 22
VCB(VEB)
400
mW
300
250
200
150
100
50
0
0 20 40 60 80 100 120 °C 150
TS
4
2007-04-27
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