SMBTA06UPN_07 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN / PNP Silicon AF Transistor Array High breakdown voltage

SMBTA06UPN
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
Unit
≤ 105
K/W
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-base breakdown voltage
I_C = 100 µA, I_E = 0
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
Collector-base cutoff current
V_CB = 80 V, I_E = 0
V_CB = 80 V, I_E = 0 , T_A = 150 °C
V_(BR)CEO 80
-
-V
V_(BR)CBO 80
-
-
V_(BR)EBO 4
-
-
I _CBO
µA
-
-
0.1
-
-
20
Collector-emitter cutoff current
V_CE = 60 V, I_B = 0
DC current gain²⁾
I_C = 10 mA, V_CE = 1 V
I_C = 100 mA, V_CE = 1 V
Collector-emitter saturation voltage²⁾
I_C = 100 mA, I_B = 10 mA
Base-emitter voltage²⁾
I_C = 100 mA, V_CE = 1 V
I _CEO
-
h_FE
100
100
V_CEsat
-
V_BE(ON)
-
- 100 nA
-
-
-
-
-
- 0.25 V
-
1.2
AC Characteristics
Transition frequency
I_C = 20 mA, V_CE = 5 V, f = 20 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
f_T
-
100
- MHz
C_cb
-
7
- pF
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
2_{Pulse test: t < 300µs; D < 2%}
2
2007-04-27