SMBTA06UPN_07 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN / PNP Silicon AF Transistor Array High breakdown voltage

NPN / PNP Silicon AF Transistor Array
• High breakdown voltage
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
SMBTA06UPN
4
5
3
6
2
1
Tape loading orientation
C1
B2
E2
6
5
4
Top View
654
W1s
123
Direction of Unreeling
Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
SC74_Tape
TR2
TR1
1
2
3
E1
B1
C2
EHA07177
Type
SMBTA06UPN
Marking
Pin Configuration
Package
s2P
1=E 2=B 3=C 4=E 5=B 6=C SC74
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T_S ≤ 115 °C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
1_{Pb-containing package may be available upon special request}
Value
Unit
80
V
80
4
500
mA
1
A
100
mA
200
330
mW
150
°C
-65 ... 150
1
2007-04-27