SDB20S30_07 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode Switching behavior benchmark No reverse recovery

SDB20S30
1 Power dissipation (per leg)
P_tot = f (T_C)
70
W
60
55
50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 _°C 180
T_C
3 Typ. forward characteristic (per leg)
I_F = f (V_F)
parameter: T_j , tp = 350 µs
20
A
2 Diode forward current (per leg)
I_F= f (T_C)
parameter: T_j≤175 °C
11
A
9
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140 _°C 180
T_C
4 Typ. forward power dissipation vs.
average forward current (per leg)
P_F(AV)=f(I_F) T_C=100°C, d = t_p/T
32
W
16
24
14
12
20
10
16
d=1
-40°C
d=0.5
8
25°C
100°C
12
d=0.2
d=0.1
6
125°C
150°C
8
4
4
2
0
0.6 0.8 1 1.2 1.4 1.6 1.8 _V 2.2
V_F
Rev. 1.2
Page 4
0
0 2 4 6 8 10 12 14 _A 18
I_F(AV)
2007-03-27