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| SDB20S30_07 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode Switching behavior benchmark No reverse recovery | |||
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SDB20S30
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg)
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Total capacitive charge1)
VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C
Switching time2)
VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C
Qc
-
23
- nC
trr
- n.a. - ns
Total capacitance
C
pF
VR=0V, TC=25°C, f=1MHz
VR=150V, TC=25°C, f=1MHz
VR=300V, TC=25°C, f=1MHz
-
600
-
-
55
-
-
40
-
Rev. 1.2
Page 3
2007-03-27
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